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6MBI150VB-120-50 PDF预览

6MBI150VB-120-50

更新时间: 2024-01-14 02:26:33
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
6页 574K
描述
IGBT MODULE

6MBI150VB-120-50 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X21
针数:35Reach Compliance Code:unknown
风险等级:5.72Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):150 A
集电极-发射极最大电压:1200 V配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码:R-XUFM-X21元件数量:6
端子数量:21封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):530 ns
标称接通时间 (ton):390 nsBase Number Matches:1

6MBI150VB-120-50 数据手册

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6MBI150VB-120-50  
IGBT MODULE (V series)  
IGBT Modules  
1200V / 150A / 6 in one package  
Features  
Compact Package  
P.C.Board Mount  
Low VCE (sat)  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)  
Maximum  
ratings  
Items  
Symbols  
Conditions  
Units  
Collector-Emitter voltage  
V
CES  
GES  
1200  
±20  
150  
300  
150  
300  
770  
175  
V
V
Gate-Emitter voltage  
Collector current  
V
Ic  
Continuous  
1ms  
Tc=80°C  
Tc=80°C  
Icp  
A
-Ic  
-Ic pulse  
1ms  
Collector power dissipation  
Junction temperature  
Pc  
Tj  
1 device  
W
Operating junciton temperature  
(under switching conditions)  
Tjop  
150  
°C  
Case temperature  
Tc  
125  
Storage temperature  
Tstg  
-40 to +125  
between terminal and copper base (*1)  
between thermistor and others (*2)  
Isolation voltage  
Screw torque  
V
iso  
AC : 1min.  
M5  
2500  
3.5  
VAC  
N m  
Mounting (*3)  
-
Note *1: All terminals should be connected together during the test.  
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.  
Note *3: Recommendable value : 2.5-3.5 Nm (M5)  
1

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