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2SJ472-01S PDF预览

2SJ472-01S

更新时间: 2024-02-03 19:17:12
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
4页 245K
描述
P-CHANNEL SILICON POWER MOSFET

2SJ472-01S 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:30 V
最大漏极电流 (ID):5 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL功耗环境最大值:15 W
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管元件材料:SILICON最大关闭时间(toff):70 ns
最大开启时间(吨):45 nsBase Number Matches:1

2SJ472-01S 数据手册

 浏览型号2SJ472-01S的Datasheet PDF文件第2页浏览型号2SJ472-01S的Datasheet PDF文件第3页浏览型号2SJ472-01S的Datasheet PDF文件第4页 
FUJI POWER MOSFET  
2SJ472-01L,S  
P-CHANNEL SILICON POWER MOSFET  
FAP-III SERIES  
Outline Drawings  
Features  
K-Pack(L)  
K-Pack(S)  
High speed switching  
Low on-resistance  
No secondary breakdown  
Low driving power  
High forward Transconductance  
Avalanche-proof  
Applications  
Switching regulators  
DC-DC converters  
General purpose power amplifier  
L-type  
S-type  
EIAJ  
Maximum ratings and characteristics  
Absolute maximum ratings (Tc=25°C unless otherwise specified)  
Equivalent circuit schematic  
Item  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
VDS  
ID  
-30  
±5  
A
Continuous drain current  
Pulsed drain current  
Drain(D)  
A
ID(puls]  
VGS  
EAV  
PD  
±20  
V
Gate-source voltage  
±16  
Gate(G)  
V
Maximum avalanche energy *1  
Maximum power dissipation(Tc=25  
Operating and storage  
temperature range  
191.8  
15  
°C)  
W
°C  
°C  
Tch  
+150  
-55 to +150  
Source(S)  
Tstg  
*1 L=10.23mH, Vcc= -12V  
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Test Conditions  
Symbol  
BVDSS  
VGS(th)  
IDSS  
Item  
ID=1mA  
ID=1mA  
VDS= -30V  
VGS=0V  
VGS=0V  
V
-30  
Drain-source breakdown voltage  
VDS=VGS  
V
-1.0  
-1.5  
-10  
-0.2  
10  
-2.5  
Gate threshold voltage  
Zero gate voltage drain current  
Tch=25°C  
μA  
mA  
nA  
-500  
-1.0  
Tch=125°C  
±16V  
VGS=  
VDS=0V  
IGSS  
100  
850  
400  
Gate-source leakage current  
ID= -2.5A  
VGS= -4V  
mΩ  
mΩ  
S
RDS(on)  
480  
210  
3.0  
250  
150  
85  
Drain-source on-state resistance  
VGS= -10V  
ID=2.5A VDS= -25V  
VDS= -25V  
1.5  
gfs  
Forward transconductance  
Input capacitance  
Ciss  
Coss  
Crss  
td(on)  
tr  
380  
230  
130  
15  
pF  
VGS=0V  
Output capacitance  
Reverse transfer capacitance  
Turn-on time  
f=1MHz  
VCC= -12V RG=10 Ω  
ID= -5A  
10  
ns  
20  
30  
VGS= -10V  
25  
40  
td(off)  
tf  
Turn-off time  
20  
30  
μ
L=100 H  
Tch=25°C  
A
IAV  
-5  
Avalanche capability  
V
VSD  
trr  
IF=2xIDR VGS=0V Tch=25°C  
IF=IDR VGS=0V  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
-2.50  
90  
-3.8  
ns  
μC  
-di/dt=100A/μs Tch=25°C  
Qrr  
0.30  
Thermal characteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
8.33  
°C/W  
Rth(ch-c)  
Thermal resistance  
125.0  
°C/W  
Rth(ch-a)  
1

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