生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.83 | Is Samacsys: | N |
最大集电极电流 (IC): | 30 A | 集电极-发射极最大电压: | 600 V |
配置: | DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 750 |
JESD-30 代码: | R-PUFM-X3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 200 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 10000 ns |
最大开启时间(吨): | 3000 ns | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
1DI400A-120 | FUJI | POWER TRANSISTOR MODULE |
获取价格 |
|
1DI400A140 | ETC | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.4KV V(BR)CEO | 400A I(C) |
获取价格 |
|
1DI400D100 | ETC | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 400A I(C) |
获取价格 |
|
1DI400D-100 | FUJI | Power Bipolar Transistor, 400A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epox |
获取价格 |
|
1DI400M-050 | FUJI | Power Bipolar Transistor, 400A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy |
获取价格 |
|
1DI400MN-050 | ETC |
获取价格 |