Features
• Fast Read Access Time - 45 ns
• Low-Power CMOS Operation
– 100 µA max. Standby
– 25 mA max. Active at 5 MHz (FT27C010L)
– 35 mA max. Active at 5 MHz (FT27C010)
• JEDEC Standard Packages
– 32-Lead CDIL/LCC/JLCC +Custom Ceramic packages
• 5V ± 10% Supply
• High Reliability CMOS Technology
1-Megabit
(128K x 8)
UVEPROM
– 2000V ESD Protection
– 200 mA Latchup Immunity
• Programming Algorithm - 100 µs/byte (typical)
• CMOS and TTL Compatible Inputs and Outputs
• Integrated Product Identification Code
• Commercial, Industrial and Automotive Temperature Ranges. MILITARY-Contact sales
FT27C010(L)
Description
The FT27C010(L) is a low-power, high-performance 1,048,576-bit UV erase/program-
mable read only memory (UVEPROM) organised as 128K by 8 bits. They require
only one 5V power supply in normal read mode operation. Any byte can be accessed
in less than 45 ns, eliminating the need for speed reducing WAIT states on high-per-
formance microprocessor systems.
Two power versions are offered. In read mode, the FT27C010 typically consumes 25
mA while the FT27C010L requires only 8 mA. Standby mode supply current for both
parts is typically less than 10 µA.
Pin Configurations
Pin Name
A0 - A16
O0 - O7
CE
Function
Addresses
Outputs
Chip Enable
Output Enable
Program Strobe
No Connect
1M bit EPROM
OE
PGM
CLCC/JLCC Top View
NC
CDIL Top View
A7
A6
A5
A4
A3
5
6
7
8
9
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 O7
VPP
A16
A15
A12
A7
1
2
3
4
5
6
7
8
9
32 VCC
31 PGM
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 O7
20 O6
19 O5
18 O4
17 O3
A2 10
A1 11
A0 12
O0 13
A6
A5
A4
A3
A2 10
A1 11
A0 12
O0 13
O1 14
O2 15
GND 16
1
2006
1/11
Rev 1