Datasheet > FSS23A4R

FSS23A4R

更新时间： 2024-11-22 22:48:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	50K
描述
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSS23A4R 数据手册

FSS23A4D,

FSS23A4R

7A, 250V, 0.460 Ohm, Rad Hard,

June 1998

SEGR Resistant, N-Channel Power MOSFETs

Features

Description

• 7A, 250V, r

= 0.460Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

DS(ON)

• Total Dose

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

• Photo Current

- 4nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS23A4D1

FSS23A4D3

FSS23A4R1

FSS23A4R3

FSS23A4R4

Symbol

10K

100K

Commercial

TXV

Space

Formerly available as type TA17698.

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4484.1

3-65

12 3 4 5 6 7 8

中文翻译

下载PDF

与FSS23A4R相关器件

型号	品牌	获取价格	描述	数据表
FSS23A4R1	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4R3	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4R4	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23AOD1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-257AA
FSS23AOD3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-257AA
FSS23AOR1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-257AA
FSS23AOR3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-257AA
FSS23AOR4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-257AA
FSS24	ETC	获取价格	Schottky Rectifiers
FSS242	SANYO	获取价格	DC/DC Converter Applications

与FSS23A4R相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS23A4R

FSS23A4R 数据手册

与FSS23A4R相关器件

与FSS23A4R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS23A4R

FSS23A4R 数据手册

与FSS23A4R相关器件

与FSS23A4R相关文章

您还可以找

您在本页遇到什么问题？