Datasheet > FSS23A0R3

FSS23A0R3

更新时间： 2024-11-25 22:26:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	60K
描述
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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FSS23A0R3 数据手册

FSS23A0D, FSS23A0R

Data Sheet

June 1999

File Number 4485.2

9A, 200V, 0.330 Ohm, Radiation Hardened,

SEGR Resistant N-Channel Power

MOSFETs

Features

• 9A, 200V, r

• Total Dose

= 0.330Ω

DS(ON)

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Photo Current

- 3.0nA Per-RAD(Si)/s Typically

• Neutron

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Packaging

TO-257AA

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS23A0D1

FSS23A0D3

FSS23A0R1

FSS23A0R3

FSS23A0R4

10K

100K

Commercial

TXV

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

Space

Formerly available as type TA17697.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

4-1

12 3 4 5 6 7 8

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与FSS23A0R3相关器件

型号	品牌	获取价格	描述	数据表
FSS23A0R4	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A4D	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4D1	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4D3	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4R	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4R1	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4R3	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23A4R4	INTERSIL	获取价格	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23AOD1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-257AA
FSS23AOD3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-257AA

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