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FSS23A0R1 PDF预览

FSS23A0R1

更新时间: 2024-11-22 22:26:31
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 60K
描述
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSS23A0R1 数据手册

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FSS23A0D, FSS23A0R  
Data Sheet  
June 1999  
File Number 4485.2  
9A, 200V, 0.330 Ohm, Radiation Hardened,  
SEGR Resistant N-Channel Power  
MOSFETs  
Features  
• 9A, 200V, r  
Total Dose  
= 0.330  
DS(ON)  
The Discrete Products Operation of Intersil has developed a  
series of Radiation Hardened MOSFETs specifically  
designed for commercial and military space applications.  
Enhanced Power MOSFET immunity to Single Event Effects  
(SEE), Single Event Gate Rupture (SEGR) in particular, is  
combined with 100K RADS of total dose hardness to provide  
devices which are ideally suited to harsh space  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Photo Current  
- 3.0nA Per-RAD(Si)/s Typically  
• Neutron  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
- Maintain Pre-RAD Specifications  
2
for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
Symbol  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
D
G
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
S
Packaging  
TO-257AA  
Ordering Information  
S
D
G
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSS23A0D1  
FSS23A0D3  
FSS23A0R1  
FSS23A0R3  
FSS23A0R4  
10K  
100K  
100K  
100K  
Commercial  
TXV  
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
Space  
Formerly available as type TA17697.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-1  

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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-257AA