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FSS23A0R1 PDF预览

FSS23A0R1

更新时间： 2024-11-26 20:20:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 114K
描述
Power Field-Effect Transistor, 9A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

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FSS23A0R1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-MSFM-P3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.26
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：9 A
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.33 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AA
JESD-30 代码：R-MSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：22 W
最大脉冲漏极电流 (IDM)：27 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FSS23A0R1 数据手册

 浏览型号FSS23A0R1的Datasheet PDF文件第2页浏览型号FSS23A0R1的Datasheet PDF文件第3页浏览型号FSS23A0R1的Datasheet PDF文件第4页浏览型号FSS23A0R1的Datasheet PDF文件第5页浏览型号FSS23A0R1的Datasheet PDF文件第6页浏览型号FSS23A0R1的Datasheet PDF文件第7页 
FSS23A0D, FSS23A0R  
Data Sheet  
December 2001  
9A, 200V, 0.330 Ohm, Radiation Hardened,  
SEGR Resistant N-Channel Power  
MOSFETs  
Features  
• 9A, 200V, r  
• Total Dose  
= 0.330Ω  
DS(ON)  
The Discrete Products Operation of Fairchild has developed  
a series of Radiation Hardened MOSFETs specifically  
designed for commercial and military space applications.  
Enhanced Power MOSFET immunity to Single Event Effects  
(SEE), Single Event Gate Rupture (SEGR) in particular, is  
combined with 100K RADS of total dose hardness to provide  
devices which are ideally suited to harsh space  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
The Fairchild portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Photo Current  
- 3.0nA Per-RAD(Si)/s Typically  
• Neutron  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
- Maintain Pre-RAD Specifications  
2
for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
Symbol  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
D
G
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Fairchild for any desired deviations  
from the data sheet.  
S
Packaging  
TO-257AA  
Ordering Information  
S
D
G
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSS23A0D1  
FSS23A0D3  
FSS23A0R1  
FSS23A0R3  
FSS23A0R4  
10K  
100K  
100K  
100K  
Commercial  
TXV  
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
Space  
Formerly available as type TA17697.  
©2001 Fairchild Semiconductor Corporation  
FSS23A0D, FSS23A0R Rev. B  
12345678

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 		7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS23AOD1 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-257AA

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