Datasheet > FSC150

FSC150

更新时间： 2024-11-18 23:52:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	52K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| CHIP

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FSC150 数据手册

FSC150

Data Sheet

May 1999

File Number 4715

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFET

Die Characteristics

ATTACH AREAS:

(S) Source - 0.060” Diameter

(G) Gate - 0.032” x 0.032”

(D) Drain - Back Side

Features

• 100V, 25A (Note), 0.070Ω

• Total Dose

DIE THICKNESS:

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

14 mil 1 mil

• Single Event

CONTACT METALLIZATION:

- SEE Immunity for 1E5 ions/cm having an LET of

36MeV/mg/cm and a Range of 36µm with V

80% of Rated Breakdown and V

Gate and Source - Aluminum (4µ)

Drain - Quad-Metal (Al-Ti-Ni-Au)

[Al (3µ) - Ti (0.3µ) - Ni (1µ) - Au (0.05µ)]

up to

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

Metallization Mask Layout

DSS

- Typically Survives 2E12 if Current Limited to I

FSC150

• Photo Current

- 7.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

259 MILS

- Usable to 3E14 Neutrons/cm

NOTE: Current rating deﬁned for TO-254AA package.

Symbol

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

100K JANKC FSC150

12 3 4

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