Datasheet > FSC110R

FSC110R

更新时间： 2024-09-23 23:52:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	54K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| CHIP

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FSC110R 数据手册

FSC110R

Data Sheet

April 1999

File Number 4679

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFET

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

Features

100K

JANKC

FSC110R

• 100V, 3.5A (Note), 0.600Ω

• Total Dose

Symbol

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- SEE Immunity for 1E5 ions/cm having an LET of

36MeV/mg/cm and a Range of 36µm with V

80% of Rated Breakdown and V

up to

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 0.3nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

NOTE: Current rating deﬁned for TO-205AF package.

FSC110R Rev. A

12 3 4 5

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