生命周期: | Active | 零件包装代码: | TO-220S |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 21 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS7VS-5-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 250V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal | |
FS-8000 | FUJITSU |
获取价格 |
MULTI-USER KVM SWITCH | |
FS800R06A2E3 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel, MODULE-33 | |
FS800R07A2E3 | INFINEON |
获取价格 |
HybridPACK 2 module with trench/fieldstop IGBT3 and Emitter Controlled diode | |
FS800R07A2E3_B31 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FS8107E | PTC |
获取价格 |
Low Power Phase-Locked Loop IC | |
FS8108 | PTC |
获取价格 |
Low Power Phase-Locked Loop IC | |
FS8160 | ETC |
获取价格 |
1.1 GHz/1.1 GHz Dual Phase-locked Loop IC | |
FS8170 | PTC |
获取价格 |
2.5 GHz Low Power Phase-locked Loop IC | |
FS820R08A6P2 | INFINEON |
获取价格 |
PinFin Baseplate, Short Tabs |