FS7VS-12A

更新时间： 2024-09-23 07:00:11

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
7页	202K
描述
High-Speed Switching Use Nch Power MOS FET

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中文翻译

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数据手册

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FS7VS-12A 数据手册

FS7VS-12A

High-Speed Switching Use

Nch Power MOS FET

REJ03G0271-0100

Under development

Rev.1.00

Aug.20.2004

Features

•

Drive voltage : 10 V

_DSS: 600 V

_{DS(ON) (max)}: 1.3 Ω

I_D: 7 A

Outline

LDPAK(S)-1

2, 4

1. Gate

2. Drain

3. Source

4. Drain

Applications

SMPS, lamp ballast, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

600

±30

Unit

Conditions

V_GS= 0 V

V_DS= 0 V

Drain current (Pulsed)

Avalanche current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

I_DM

I_DA

L = 200 µH

P_D

100

°C

Tch

Tstg

—

– 55 to +150

1.2

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

12 3 4 5 6 7

中文翻译

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与FS7VS-12A相关器件

型号	品牌	获取价格	描述	数据表
FS7VS-12A-T11	RENESAS	获取价格	High-Speed Switching Use Nch Power MOS FET
FS7VS14A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 700V V(BR)DSS \| 7A I(D) \| TO-263AB
FS7VS-14A	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS7VS-14A	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS7VS-14A-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 7A I(D), 700V, 1.82ohm, 1-Element, N-Channel, Silicon, Meta
FS7VS-14A-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 7A I(D), 700V, 1.82ohm, 1-Element, N-Channel, Silicon, Meta
FS7VS16A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 7A I(D) \| TO-263AB
FS7VS-16A	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS7VS-16A	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS7VS-16A-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 7A I(D), 800V, 1.64ohm, 1-Element, N-Channel, Silicon, Meta