Datasheet > FS75R06KE3

FS75R06KE3

更新时间： 2024-11-27 10:24:43

品牌	Logo	应用领域
EUPEC		晶体二极管晶体管双极性晶体管局域网
页数	文件大小	规格书
8页	307K
描述
EconoPACK with fast trench/fieldstop IGBT and EmCon3 diode

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中文翻译

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技术参数
数据手册

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FS75R06KE3 技术参数

生命周期：	Transferred	包装说明：	ECONOPACK-28
Reach Compliance Code：	unknown	风险等级：	5.63
Is Samacsys：	N	外壳连接：	ISOLATED
最大集电极电流 (IC)：	75 A	集电极-发射极最大电压：	600 V
配置：	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	JESD-30 代码：	R-XUFM-X28
元件数量：	6	端子数量：	28
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
晶体管元件材料：	SILICON	标称断开时间 (toff)：	320 ns
标称接通时间 (ton)：	45 ns	Base Number Matches：	1

FS75R06KE3 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS75R06KE3

EconoPACK™ mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode

EconoPACK™ with fast trench/fieldstop IGBT³ and EmCon3 diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

I† ÒÓÑ

I†ç¢

600

Kollektor-Dauergleichstrom

T† = 70°C, TÝÎ = 175°C

DC-collector current

Periodischer Kollektor Spitzenstrom

t« = 1 ms

150

250

+/-20

repetitive peak collector current

Gesamt-Verlustleistung

T† = 25°C, TÝÎ = 175°C

total power dissipation

PÚÓÚ

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 75 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,45 1,90

1,60

1,70

Gate-Schwellenspannung

gate threshold voltage

I† = 1,20 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

4,9

5,8

0,80

0,0

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

4,60

0,145

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

1,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 75 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 5,1 Â

TÝÎ = 25°C

tÁ ÓÒ

0,025

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 75 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 5,1 Â

TÝÎ = 25°C

tØ

0,02

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 75 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 5,1 Â

TÝÎ = 25°C

tÁ ÓËË

0,21

0,24

0,25

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 75 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 5,1 Â

TÝÎ = 25°C

tË

0,06

0,07

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 75 A, V†Š = 300 V, L» = 30 nH

V•Š = ±15 V, dI/dt = 4000 A/µs (T=150°C)

R•ÓÒ = 5,1 Â

TÝÎ = 25°C

TÝÎ = 125°C

TÝÎ = 150°C

0,35

0,50

0,60

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 75 A, V†Š = 300 V, L» = 30 nH TÝÎ = 25°C

V•Š = ±15 V, dU/dt = 4000 V/µs (T=150°C) TÝÎ = 125°C

2,40

2,80

3,00

EÓËË

R•ÓËË = 5,1 Â

TÝÎ = 150°C

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 360 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

t« ù 8 µs, TÝÎ = 25°C

t« ù 6 µs, TÝÎ = 150°C

530

380

I»†

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

RÚÌ†™

0,60 K/W

K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

0,20

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Christoph Messelke

approved by: Robert Severin

date of publication: 2006-1-2

revision: 2.0

12 3 4 5 6 7 8

中文翻译

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与FS75R06KE3相关器件

型号	品牌	获取价格	描述	数据表
FS75R06KE3BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ECONOPACK-28
FS75R06KF	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C)
FS75R06KF2	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C)
FS75R06KF3	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C)
FS75R06KL4	EUPEC	获取价格	IGBT-inverter
FS75R07N2E4	INFINEON	获取价格	EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
FS75R07N2E4_B11	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-25
FS75R07N2E4B11BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-25
FS75R07N2E4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-28
FS75R07U1E4	INFINEON	获取价格	Insulated Gate Bipolar Transistor

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