FS70KMJ-06F

更新时间： 2024-09-24 07:00:11

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体开关晶体管脉冲局域网
页数	文件大小	规格书
7页	103K
描述
High-Speed Switching Use Nch Power MOS FET

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数据手册

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FS70KMJ-06F 数据手册

FS70KMJ-06F

High-Speed Switching Use

Nch Power MOS FET

REJ03G0256-0100

Rev.1.00

Aug.20.2004

Features

•

Drive voltage : 4 V

V_DSS: 60 V

_{DS(ON) (max)}: 7.0 mΩ

I_D: 70 A

Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 70 ns

Outline

TO-220FN

1. Gate

2. Drain

3. Source

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

Conditions

V_GS= 0 V

±20

V_DS= 0 V

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

I_DM

280

I_DA

L = 10 µH

I_S

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

I_SM

280

P_D

°C

Tch

Tstg

Viso

– 55 to +150

2000

AC 1 minute,

Terminal to case

Mass

—

2.0

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

12 3 4 5 6 7

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