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FS70KM-06 PDF预览

FS70KM-06

更新时间: 2024-01-04 21:07:02
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
4页 45K
描述
HIGH-SPEED SWITCHING USE

FS70KM-06 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220FN包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.33
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):70 A
最大漏极电流 (ID):70 A最大漏源导通电阻:0.0075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:35 W
最大功率耗散 (Abs):35 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS70KM-06 数据手册

 浏览型号FS70KM-06的Datasheet PDF文件第2页浏览型号FS70KM-06的Datasheet PDF文件第3页浏览型号FS70KM-06的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS70KM-06  
HIGH-SPEED SWITCHING USE  
FS70KM-06  
OUTLINE DRAWING  
Dimensions in mm  
10 ± 0.3  
2.8 ± 0.2  
f 3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
E
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
1 2 3  
w
¡10V DRIVE  
¡VDSS .................................................................................. 60V  
¡rDS (ON) (MAX) .............................................................7.5m  
¡ID ......................................................................................... 70A  
¡ntegrated Fast Recovery Diode (TYP.) .............. 85ns  
¡Viso ................................................................................ 2000V  
q GATE  
w DRAIN  
e SOURCE  
q
e
TO-220FN  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
60  
±20  
V
70  
A
IDM  
IDA  
Drain current (Pulsed)  
280  
A
Avalanche drain current (Pulsed) L = 100µH  
Source current  
70  
A
IS  
70  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
280  
A
PD  
35  
W
°C  
Tch  
Tstg  
Viso  
–55 ~ +150  
–55 ~ +150  
2000  
2.0  
Storage temperature  
°C  
V
g
Isolation voltage  
Weight  
AC for 1minute, Terminal to case  
Typical value  
Feb.1999  

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