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FS70KM-03 PDF预览

FS70KM-03

更新时间: 2024-02-17 10:42:08
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 42K
描述
Power Field-Effect Transistor, 70A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN

FS70KM-03 技术参数

生命周期:Obsolete零件包装代码:TO-220FN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):70 A最大漏极电流 (ID):70 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):280 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS70KM-03 数据手册

 浏览型号FS70KM-03的Datasheet PDF文件第2页浏览型号FS70KM-03的Datasheet PDF文件第3页浏览型号FS70KM-03的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS70KM-03  
HIGH-SPEED SWITCHING USE  
FS70KM-03  
OUTLINE DRAWING  
Dimensions in mm  
10 ± 0.3  
2.8 ± 0.2  
f 3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
E
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
1 2 3  
w
¡10V DRIVE  
¡VDSS .................................................................................. 30V  
¡rDS (ON) (MAX) .............................................................. 14m  
¡ID ......................................................................................... 70A  
¡Integrated Fast Recovery Diode (TYP.) ............. 70ns  
¡Viso ................................................................................ 2000V  
q GATE  
w DRAIN  
e SOURCE  
q
e
TO-220FN  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
30  
±20  
V
70  
A
IDM  
IDA  
Drain current (Pulsed)  
280  
A
Avalanche drain current (Pulsed) L = 30µH  
Source current  
70  
A
IS  
70  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
280  
A
PD  
30  
W
°C  
Tch  
Tstg  
Viso  
–55 ~ +150  
–55 ~ +150  
2000  
2.0  
Storage temperature  
°C  
V
g
Isolation voltage  
Weight  
AC for 1minute, Terminal to case  
Typical value  
Feb.1999  

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