Technische Information / technical information
IGBT-Module
IGBT-modules
FS450R17KE3
EconoPACK™+ Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode
EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode
IGBT-Wechselrichter / IGBT-inverter
Vorläufige Daten / preliminary data
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C, TÝÎ = 150°C
T† = 25°C, TÝÎ = 150°C
I† ÒÓÑ
I†
450
605
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
I†ç¢
PÚÓÚ
900
2250
+/-20
A
W
V
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 150°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 450 A, V•Š = 15 V
I† = 450 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C
2,00 2,45
2,40
V
V
V†Š ÙÈÚ
V•ŠÚÌ
Q•
Gate-Schwellenspannung
gate threshold voltage
I† = 18,0 mA, V†Š = V•Š, TÝÎ = 25°C
V•Š = -15 V ... +15 V
5,2
5,8
5,10
1,7
6,4
V
µC
Â
Gateladung
gate charge
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
40,5
1,30
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
CØþÙ
I†Š»
Kollektor-Emitter Reststrom
collector-emitter cut-off current
3,0
Gate-Emitter Reststrom
gate-emitter leakage current
I•Š»
tÁ ÓÒ
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V
R•ÓÒ = 3,3 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,28
0,30
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V
R•ÓÒ = 3,3 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,08
0,10
µs
µs
tØ
tÁ ÓËË
tË
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V
R•ÓËË = 3,3 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,81
1,00
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 450 A, V†Š = 900 V
V•Š = ±15 V
R•ÓËË = 3,3 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,18
0,30
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 450 A, V†Š = 900 V
V•Š = ±15 V, L» = 80 nH
R•ÓÒ = 3,3 Â
TÝÎ = 25°C
TÝÎ = 125°C
96,5
140
mJ
mJ
EÓÒ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 450 A, V†Š = 900 V
V•Š = ±15 V, L» = 80 nH
R•ÓËË = 3,3 Â
TÝÎ = 25°C
TÝÎ = 125°C
96,0
140
mJ
mJ
EÓËË
Kurzschlussverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎ = 125°C, V†† = 1000 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
1800
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
0,055 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
RÚ̆™
0,047
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Martin Wölz
date of publication: 2004-11-2
revision: 2.3
approved by: Wilhelm Rusche
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