生命周期: | Transferred | 零件包装代码: | TO-220FN |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 60 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FS20R06KFS | ETC | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C) |
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FS20R06KLS | ETC | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C) |
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FS20R06VE3 | EUPEC | IGBT-modules |
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FS20R06VE3_B2 | EUPEC | IGBT-modules |
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FS20R06VE3B2BOMA1 | INFINEON | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-15 |
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FS20R06VE3BOMA1 | INFINEON | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-13 |
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