生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 800 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 12.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 55 W | 最大脉冲漏极电流 (IDM): | 3 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS1AS-16A-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 800V, 12.3ohm, 1-Element, N-Channel, Silicon, Meta | |
FS1AS18A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1A I(D) | TO-252AA | |
FS1AS-18A | MITSUBISHI |
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HIGH-SPEED SWITCHING USE | |
FS1AS-18A | POWEREX |
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Nch POWER MOSFET HIGH-SPEED SWITCHING USE | |
FS1AS-18A-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal- | |
FS1AS-18A-T2 | MITSUBISHI |
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Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal- | |
FS1A-TP-HF | MCC |
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暂无描述 | |
FS1B | MCC |
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1 Amp Fast Recovery Silicon Rectifier 50 to 1000 Volts | |
FS1B | GOOD-ARK |
获取价格 |
1.0 AMPS. FAST RECOVERY SILICON RECTIFIER | |
FS1B | MDD |
获取价格 |
SURFACE MOUNT FAST RECOVERY RECTIFIER |