Datasheet > FS150R12W3T7_B11

FS150R12W3T7_B11

更新时间： 2024-11-06 17:02:03

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FS150R12W3T7_B11 数据手册

FS150R12W3T7_B11

™

EasyPACK module

™

EasyPACK module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and PressFIT / NTC

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 150 A / I_CRM= 300 A

- Low V_CE,sat

- TRENCHSTOP^TMIGBT7

- Overload operation up to 175°C

• Mechanical features

- Al₂O₃substrate with low thermal resistance

- High power and thermal cycling capability

- Integrated NTC temperature sensor

- PressFIT contact technology

Potential applications

• Auxiliary inverters

• Motor drives

• Servo drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Revision 1.00

2021-11-02

12 3 4 5 6 7...15

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型号	品牌	获取价格	描述	数据表
FS150R16KF4	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1.6KV V(BR)CES \| 150A I(C)
FS150R17KE3G	EUPEC	获取价格	EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS150R17KE3G	INFINEON	获取价格	Solder Pin
FS150R17KE3GBOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 240A I(C), 1700V V(BR)CES, N-Channel, ECONOPACK-29
FS150R17N3E4	INFINEON	获取价格	EconoPACK™ 3 1700 V，150 A 六单元 IGBT 模块，采用第四代快速
FS150R17N3E4_B11	INFINEON	获取价格	PressFIT
FS150R17N3E4B11BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor
FS150R17N3E4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES
FS150R17PE4	INFINEON	获取价格	EconoPACK?4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT /
FS150R17PE4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-20