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FS100R12KT3 PDF预览

FS100R12KT3

更新时间: 2024-11-19 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
8页 452K
描述
EconoPACK?3 1200V 六单元 IGBT 模块,配备快速第三代沟槽栅 IGBT 和高效率发射极控制二级管和 NTC 温度检测

FS100R12KT3 数据手册

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TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation  
IGBT-Module  
IGBT-modules  
FS100R12KT3  
EconoPACK™3ꢀModulꢀmitꢀschnellemꢀTrench/FeldstopꢀIGBT3ꢀundꢀHighꢀEfficiencyꢀDiodeꢀ  
EconoPACK™3ꢀwithꢀfastꢀtrench/fieldstopꢀIGBT3ꢀandꢀEmitterꢀControlledꢀHighꢀEfficiencyꢀdiodeꢀ  
VorläufigeꢀDaten  
PreliminaryꢀData  
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter  
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues  
Kollektor-Emitter-Sperrspannung  
Collector-emitterꢀvoltage  
Tvj = 25°C  
VCES  
1200  
V
Kollektor-Dauergleichstrom  
ContinuousꢀDCꢀcollectorꢀcurrent  
TC = 80°C, Tvj max = 150°C  
TC = 25°C, Tvj max = 150°C  
IC nom  
IC  
100  
140  
A
A
PeriodischerꢀKollektor-Spitzenstrom  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
tP = 1 ms  
ICRM  
Ptot  
200  
480  
A
Gesamt-Verlustleistung  
Totalꢀpowerꢀdissipation  
TC = 25°C, Tvj max = 150  
W  
Gate-Emitter-Spitzenspannung  
Gate-emitterꢀpeakꢀvoltage  
VGES  
+/-20  
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
Kollektor-Emitter-Sättigungsspannung  
Collector-emitterꢀsaturationꢀvoltage  
IC = 100 A, VGE = 15 V  
IC = 100 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
1,70 2,15  
1,90  
V
V
VCE sat  
VGEth  
QG  
Gate-Schwellenspannung  
Gateꢀthresholdꢀvoltage  
IC = 4,00 mA, VCE = VGE, Tvj = 25°C  
VGE = -15 V ... +15 V  
5,0  
5,8  
0,90  
7,5  
7,10  
0,30  
6,5  
V
µC  
Gateladung  
Gateꢀcharge  
InternerꢀGatewiderstand  
Internalꢀgateꢀresistor  
Tvj = 25°C  
RGint  
Cies  
Eingangskapazität  
Inputꢀcapacitance  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
VCE = 1200 V, VGE = 0 V, Tvj = 25°C  
VCE = 0 V, VGE = 20 V, Tvj = 25°C  
nF  
nF  
Rückwirkungskapazität  
Reverseꢀtransferꢀcapacitance  
Cres  
ICES  
IGES  
td on  
Kollektor-Emitter-Reststrom  
Collector-emitterꢀcut-offꢀcurrent  
5,0 mA  
Gate-Emitter-Reststrom  
Gate-emitterꢀleakageꢀcurrent  
400 nA  
µs  
Einschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 600 V  
VGE = ±15 V  
RGon = 3,9 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,26  
0,29  
µs  
Anstiegszeit,ꢀinduktiveꢀLast  
Riseꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 600 V  
VGE = ±15 V  
RGon = 3,9 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,03  
0,05  
µs  
µs  
tr  
td off  
tf  
Abschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 600 V  
VGE = ±15 V  
RGoff = 3,9 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,42  
0,52  
µs  
µs  
Fallzeit,ꢀinduktiveꢀLast  
Fallꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 600 V  
VGE = ±15 V  
RGoff = 3,9 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,07  
0,09  
µs  
µs  
EinschaltverlustenergieꢀproꢀPuls  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 100 A, VCE = 600 V, LS = 70 nH  
VGE = ±15 V  
RGon = 3,9 Ω  
Tvj = 25°C  
Tvj = 125°C  
mJ  
mJ  
Eon  
Eoff  
10,0  
10,0  
AbschaltverlustenergieꢀproꢀPuls  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
IC = 100 A, VCE = 600 V, LS = 70 nH  
VGE = ±15 V  
RGoff = 3,9 Ω  
Tvj = 25°C  
Tvj = 125°C  
mJ  
mJ  
Kurzschlußverhalten  
SCꢀdata  
VGE 15 V, VCC = 900 V  
VCEmax = VCES -LsCE ·di/dt  
ISC  
tP 10 µs, Tvj = 125°C  
400  
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
proꢀIGBTꢀ/ꢀperꢀIGBT  
RthJC  
RthCH  
Tvj op  
0,26 K/W  
K/W  
Wärmewiderstand,ꢀGehäuseꢀbisꢀKühlkörper proꢀIGBTꢀ/ꢀperꢀIGBT  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
0,09  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
TemperaturꢀimꢀSchaltbetrieb  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
125  
°C  
preparedꢀby:ꢀMM  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-10-03  
revision:ꢀ2.1  
1

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