是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.79 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 75 W | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 21 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FRM234D2 | RENESAS |
获取价格 |
7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
FRM234D3 | RENESAS |
获取价格 |
7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
FRM234D4 | RENESAS |
获取价格 |
7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
FRM234H | INTERSIL |
获取价格 |
7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs | |
FRM234H1 | RENESAS |
获取价格 |
7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
FRM234H2 | RENESAS |
获取价格 |
7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
FRM234R | INTERSIL |
获取价格 |
7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs | |
FRM234R1 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal | |
FRM234R2 | RENESAS |
获取价格 |
7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
FRM234R3 | RENESAS |
获取价格 |
7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |