Document Number: MRF6VP11KH
Rev. 7, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
MRF6VP11KHR6
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Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA,
P
out = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
1.8--150 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
RF POWER MOSFET
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
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Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 375D--05, STYLE 1
NI--1230
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RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
PART IS PUSH--PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
°C/W
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 67°C, 1000 W CW, 100 MHz
Z
R
0.03
0.13
θ
JC
θ
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
1