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402CS-23NXGL PDF预览

402CS-23NXGL

更新时间: 2022-09-19 00:16:48
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 放大器
页数 文件大小 规格书
18页 547K
描述
Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier

402CS-23NXGL 数据手册

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Document Number: MMG20271H  
Rev. 0, 12/2010  
Freescale Semiconductor  
Technical Data  
Enhancement Mode pHEMT  
Technology (E--pHEMT)  
MMG20271HT1  
High Linearity Amplifier  
The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed  
in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,  
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the  
1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can  
be utilized as a driver amplifier in the transmit chain and as a second stage LNA  
in the receive chain.  
1500--2700 MHz, 16 dB  
27.5 dBm  
Features  
E--pHEMT  
Frequency: 1500--2700 MHz  
Noise Figure: 1.7 dB @ 2140 MHz  
P1dB: 27.5 dBm @ 2140 MHz  
Small--Signal Gain: 16 dB @ 2140 MHz  
Third Order Output Intercept Point: 42 dBm @ 2140 MHz  
Single 5 Volt Supply  
Supply Current: 180 mA  
CASE 2131--01  
QFN 3x3  
50 Ohm Operation (some external matching required)  
Low Cost QFN Surface Mount Package  
RoHS Compliant  
PLASTIC  
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
1500 2140 2700  
Symbol MHz MHz MHz Unit  
Characteristic  
V
6
400  
DD  
DD  
Noise Figure  
NF  
2.0  
1.7  
1.9  
dB  
dB  
Supply Current  
I
mA  
dBm  
°C  
Input Return Loss  
(S11)  
IRL  
-- 1 6  
-- 1 4  
-- 1 7  
RF Input Power  
P
25  
in  
Storage Temperature Range  
T
stg  
--65 to +150  
150  
Output Return Loss  
(S22)  
ORL  
-- 2 0  
18  
27  
22  
40  
-- 2 2  
16  
-- 1 7  
14  
28  
28  
42  
dB  
dB  
(2)  
Junction Temperature  
T
J
°C  
2. For reliable operation, the junction temperature should not  
Small--Signal Gain  
(S21)  
G
p
exceed 150°C.  
Power Output @  
1dB Compression  
P1db  
IIP3  
27.5  
26  
dBm  
dBm  
dBm  
Third Order Input  
Intercept Point  
Third Order Output  
Intercept Point  
OIP3  
42  
1. V = 5 Vdc, T = 25°C, 50 ohm system, application circuit tuned  
DD  
A
for specified frequency.  
Table 3. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
38  
°C/W  
JC  
Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2010. All rights reserved.  

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