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27271SL PDF预览

27271SL

更新时间: 2024-02-12 07:55:09
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
15页 569K
描述
RF Power Field Effect Transistor

27271SL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8532.30.00.90
风险等级:2.28调节器方向:HORIZONTAL
最大电容:4.5 pF最小电容:0.6 pF
电容器类型:VARIABLE CAPACITOR直径:3.56 mm
介电材料:SAPPHIRE长度:7.98 mm
安装特点:SURFACE MOUNT多匝:1
最高工作温度:125 °C最低工作温度:-65 °C
封装形式:Panel Mount额定(直流)电压(URdc):500 V
表面贴装:YES端子形状:FLAT
Base Number Matches:1

27271SL 数据手册

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Document Number: MRFE6S9045N  
Rev. 0, 10/2007  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
MRFE6S9045NR1  
Designed for broadband commercial and industrial applications with fre-  
quencies up to 1000 MHz. The high gain and broadband performance of this  
device makes it ideal for large-signal, common-source amplifier applications  
in 28 volt base station equipment.  
Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,  
880 MHz, 10 W AVG., 28 V  
SINGLE N-CDMA  
LATERAL N-CHANNEL  
BROADBAND  
I
DQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,  
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =  
9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 22.1 dB  
Drain Efficiency — 32%  
RF POWER MOSFET  
ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth  
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,  
Designed for Enhanced Ruggedness  
GSM EDGE Application  
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,  
P
out = 16 Watts Avg., Full Frequency Band (920-960 MHz)  
Power Gain — 20 dB  
CASE 1265-09, STYLE 1  
TO-270-2  
Drain Efficiency — 46%  
Spectral Regrowth @ 400 kHz Offset = -62 dBc  
Spectral Regrowth @ 600 kHz Offset = -78 dBc  
EVM — 1.5% rms  
PLASTIC  
GSM Application  
Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,  
Full Frequency Band (920-960 MHz)  
Power Gain — 20 dB  
Drain Efficiency — 68%  
Features  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Integrated ESD Protection  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
- 0.5, +66  
- 0.5, +12  
32, +0  
Unit  
Vdc  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
GS  
DD  
Maximum Operation Voltage  
Storage Temperature Range  
Case Operating Temperature  
V
T
stg  
- 65 to +150  
150  
T
°C  
C
(1,2)  
Operating Junction Temperature  
T
225  
°C  
J
Table 2. Thermal Characteristics  
Characteristic  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 81°C, 45 W CW  
Case Temperature 79°C, 10 W CW  
R
θ
JC  
°C/W  
1.0  
1.1  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators  
by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2007. All rights reserved.  

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