Document Number: MRF6V2300N
Rev. 5, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V2300NR1
MRF6V2300NBR1
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
•
•
Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
P
out = 300 Watts, f = 220 MHz
Power Gain — 25.5 dB
Drain Efficiency — 68%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
•
•
•
•
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Characterized with Series Equivalent Large--Signal Impedance Parameters
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
PLASTIC
MRF6V2300NR1
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V2300NBR1
PARTS ARE SINGLE--ENDED
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--0.5, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
RF /V
in GS
RF /V
out DS
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
RF /V
in GS
RF /V
out DS
T
C
°C
(1,2)
T
J
225
°C
(Top View)
Table 2. Thermal Characteristics
Characteristic
Note: Exposed backside of the package is
the source terminal for the transistor.
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Figure 1. Pin Connections
R
θ
0.24
°C/W
JC
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
MRF6V2300NR1 MRF6V2300NBR1
RF Device Data
Freescale Semiconductor
1