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100B430JP500X PDF预览

100B430JP500X

更新时间: 2024-01-22 04:05:02
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 放大器功率放大器
页数 文件大小 规格书
16页 594K
描述
RF LDMOS Wideband Integrated Power Amplifiers

100B430JP500X 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:, 1111
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8532.24.00.20风险等级:5.25
其他特性:MIL-PRF-55681, MIL-PRF-123电容:0.000043 µF
电容器类型:CERAMIC CAPACITOR介电材料:CERAMIC
高度:2.59 mmJESD-609代码:e0
长度:2.79 mm安装特点:SURFACE MOUNT
多层:Yes负容差:5%
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装形式:SMT
包装方法:TR正容差:5%
额定(直流)电压(URdc):500 V尺寸代码:1111
表面贴装:YES温度特性代码:P90
温度系数:90+/-20ppm/Cel ppm/ °C端子面层:Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
端子形状:WRAPAROUND宽度:2.79 mm
Base Number Matches:1

100B430JP500X 数据手册

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MW4IC001MR4  
Rev. 3, 1/2005  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MW4IC001 wideband integrated circuit is designed for use as a distortion  
signature device in analog predistortion systems. It uses Freescale’s newest  
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip  
design makes it usable from 800 MHz to 2170 MHz. The linearity performances  
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and  
W-CDMA.  
MW4IC001NR4  
MW4IC001MR4  
800-2170 MHz, 900 mW, 28 V  
W-CDMA  
Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA  
Output Power — 900 mW PEP  
Power Gain — 13 dB  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
Efficiency — 38%  
High Gain, High Efficiency and High Linearity  
Designed for Maximum Gain and Insertion Phase Flatness  
Excellent Thermal Stability  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
N Suffix Indicates Lead-Free Terminations  
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.  
CASE 466-03, STYLE 1  
PLD-1.5  
PLASTIC  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
- 0.5, +65  
- 0.5, +15  
DSS  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
4.58  
0.037  
W
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
150  
°C  
°C  
stg  
T
J
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case @ 85°C  
R
θ
JC  
27.3  
°C/W  
Table 3. ESD Protection Characteristics  
Test Conditions  
Class  
Human Body Model  
0 (Minimum)  
M1 (Minimum)  
C2 (Minimum)  
Machine Model  
Charge Device Model  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD 22-A113, IPC/JEDEC J-STD-020  
3
260  
°C  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
Freescale Semiconductor, Inc., 2005. All rights reserved.  
 

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