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08051J0R1BBT PDF预览

08051J0R1BBT

更新时间: 2022-02-13 16:42:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
12页 126K
描述
Gallium Arsenide PHEMT RF Power Field Effect Transistor

08051J0R1BBT 数据手册

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Document Number: MRFG35005MT1  
Rev. 3, 1/2006  
Freescale Semiconductor  
Technical Data  
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part  
replacement. N suffix added to part number to indicate transition to lead-free  
terminations.  
MRFG35005MT1  
Gallium Arsenide PHEMT  
RF Power Field Effect Transistor  
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies  
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB  
linear base station applications.  
3.5 GHz, 4.5 W, 12 V  
POWER FET  
GaAs PHEMT  
Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,  
IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A  
@ 0.01% Probability)  
Output Power — 450 mWatt  
Power Gain — 11 dB  
Efficiency — 25%  
4.5 Watts P1dB @ 3.55 GHz  
Excellent Phase Linearity and Group Delay Characteristics  
High Gain, High Efficiency and High Linearity  
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.  
CASE 466-03, STYLE 1  
PLD-1.5  
PLASTIC  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Drain-Source Voltage  
V
15  
Vdc  
DSS  
(2)  
Total Device Dissipation @ T = 25°C  
P
10.5  
0.07  
W
W/°C  
C
D
(2)  
Derate above 25°C  
Gate-Source Voltage  
RF Input Power  
V
-5  
Vdc  
dBm  
°C  
GS  
P
30  
in  
Storage Temperature Range  
T
stg  
-65 to +150  
175  
(1)  
Channel Temperature  
T
ch  
°C  
Operating Case Temperature Range  
T
-20 to +85  
°C  
C
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
(2)  
Thermal Resistance, Junction to Case  
Class AB  
R
θ
JC  
14.2  
°C/W  
Table 3. Moisture Sensitivity Level  
Test Methodology  
Per JESD 22-A113, IPC/JEDEC J-STD-020  
Rating  
Package Peak Temperature  
Unit  
1
260  
°C  
1. For reliable operation, the operating channel temperature should not exceed 150°C.  
2. Simulated.  
Freescale Semiconductor, Inc., 2006. All rights reserved.  

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