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04023J1R5BBS PDF预览

04023J1R5BBS

更新时间: 2022-04-01 14:33:39
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
12页 899K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

04023J1R5BBS 数据手册

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Document Number: MMA25312B  
Rev. 0, 9/2012  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
MMA25312BT1  
Technology (InGaP HBT)  
High Efficiency/Linearity Amplifier  
The MMA25312B is a high efficiency InGaP HBT amplifier designed for  
use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and  
wireless broadband mesh networks. It is suitable for applications with  
frequencies from 2300 to 2700 MHz using simple external matching  
components with a 3 to 5 volt supply.  
2300--2700 MHz, 26 dB  
31 dBm  
InGaP HBT  
Features  
Frequency: 2300--2700 MHz  
P1dB: 31 dBm @ 2500 MHz  
Power Gain: 26 dB @ 2500 MHz  
OIP3: 40 dBm @ 2500 MHz  
Active Bias Control (On--chip)  
Single 3 to 5 Volt Supply  
Single--ended Power Detector  
Cost--effective QFN Surface Mount Package  
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.  
CASE 2131--01  
QFN 3×3  
PLASTIC  
Table 1. Typical CW Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
Characteristic  
Symbol 2300 2500 2700  
Unit  
dB  
MHz  
MHz  
MHz  
V
6
550  
CC  
CC  
Small--Signal Gain  
(S21)  
G
26  
26  
24.5  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
30  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1dB  
-- 1 4  
-- 11  
30  
-- 1 2  
-- 1 3  
31  
-- 1 2  
-- 1 5  
29.8  
dB  
Storage Temperature Range  
T
stg  
--65 to +150  
150  
(2)  
Junction Temperature  
T
J
°C  
Output Return Loss  
(S22)  
dB  
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @  
1dB Compression  
dBm  
1. V  
= V  
= V  
= 5 Vdc, T = 25°C, 50 ohm system, CW  
BIAS A  
CC1  
CC2  
Application Circuit  
Table 3. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
92  
°C/W  
JC  
Case Temperature 91°C, V = V  
= V  
= 5 Vdc  
BIAS  
CC1  
CC2  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2012. All rights reserved.  

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