5秒后页面跳转
FR307G-STR PDF预览

FR307G-STR

更新时间: 2024-03-18 18:39:17
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 34K
描述
Glass Passivated Rectifiers

FR307G-STR 数据手册

 浏览型号FR307G-STR的Datasheet PDF文件第2页 
GLASS PASSIVATED JUNCTION  
FAST RECOVERY RECTIFIERS  
FR301G - FR307G-STR  
PRV : 50 - 1000 Volts  
Io : 3.0 Amperes  
DO-201AD  
FEATURES :  
1.00 (25.4)  
* Glass passivated chip  
* High current capability  
* High reliability  
0.21 (5.33)  
MIN.  
0.19 (4.82)  
* Low reverse current  
* Low forward voltage drop  
* Fast switching for high efficiency  
0.375 (9.52)  
0.285 (7.24)  
1.00 (25.4)  
0.052 (1.32)  
0.048 (1.22)  
MIN.  
MECHANICAL DATA :  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.21 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
°
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
FR307G  
-STR  
SYMBOL FR301G FR302G FR303G FR304G FR305G FR306G FR307G  
UNIT  
RATING  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000 1000 Volts  
700 700 Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
100  
1000 1000 Volts  
IF(AV)  
3.0  
Amps.  
0.375"(9.5mm) Lead Length  
Ta = 55 °C  
Peak Forward Surge Current,  
8.3ms Single half sine wave superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
100  
1.3  
5
Amps.  
Volts  
mA  
Maximum Peak Forward Voltage at IF = 3.0 Amps.  
IR  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
IR(H)  
Trr  
100  
Ta = 100 °C  
mA  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Junction Temperature Range  
150  
250  
500  
250  
ns  
pf  
CJ  
60  
TJ  
- 65 to + 150  
- 65 to + 150  
°C  
°C  
Storage Temperature Range  
TSTG  
Notes :  
F
R
( 1 ) Reverse Recovery Test Conditions : I = 0.5 A, I = 1.0 A, Irr = 0.25 A.  
DC  
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V  
UPDATE : JUNE 17, 1998  

与FR307G-STR相关器件

型号 品牌 获取价格 描述 数据表
FR307GU21 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307GU26 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H31 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H31-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H32 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H32-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H33 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H34 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H35 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
FR307H36 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,