Datasheet > FR306G

FR306G

更新时间： 2024-11-16 10:24:07

品牌	Logo	应用领域
顺烨 - SHUNYE		整流二极管快速恢复二极管
页数	文件大小	规格书
2页	1005K
描述
FAST RECOVERY GLASS PASSIVATED RECTIFIERS

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中文翻译

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数据手册

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FR306G 数据手册

FR301G THRU FR307G

FAST RECOVERY GLASS PASSIVATED RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

DO-201AD

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Fast switching for high efficiency

1.0 (25.4)

MIN.

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

0.220(5.6)

0.197(5.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.375(9.6)

0.285(7.2)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.052(1.3)

0.048(1.2)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

UNITS

800 1000 VOLTS

560 700

VOLTS

301G 302G 303G 304G 305G 306G 307G

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200 400

140 280

200 400

600

420

600

V^RRM

V^RMS

V^DC

100

800 1000 VOLTS

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^A=75 C

Peak forward surge current

I^(AV)

3.0

Amps

I^FSM

V^F

200.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

1.3

Maximum instantaneous forward voltage at 3.0A

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

TA=25 C

T^A=100 C

(NOTE 1)

5.0

100.0

I^R

t^rr

150

250

500

Typical junction capacitance (NOTE 2)

C^J

RθJA

C/W

60.0

20.0

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

T^J,T^STG

-65 to +150

Note:1.Reverse recovery condition I^F=0.5A,I^R=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

中文翻译

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与FR306G相关器件

型号	品牌	获取价格	描述	数据表
FR306GH32	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GH33	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GH34	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GH35	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GH36	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GH36-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GH36-2	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GH36-3	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GM21	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
FR306GM22	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,

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