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FR103G-TB-LF PDF预览

FR103G-TB-LF

更新时间: 2024-01-04 02:32:04
品牌 Logo 应用领域
WTE 整流二极管快速恢复二极管
页数 文件大小 规格书
3页 48K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

FR103G-TB-LF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, A-405, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.42Is Samacsys:N
其他特性:HIGH RELIABILITY, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向电流:5 µA
最大反向恢复时间:0.15 µs反向测试电压:200 V
表面贴装:NO端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

FR103G-TB-LF 数据手册

 浏览型号FR103G-TB-LF的Datasheet PDF文件第2页浏览型号FR103G-TB-LF的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
FR101 – FR107  
1.0A FAST RECOVERY RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: Molded Plastic  
D
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
DO-41  
Dim  
A
Min  
25.4  
4.06  
0.71  
2.00  
Max  
!
!
!
!
B
5.21  
0.864  
2.72  
C
Marking: Type Number  
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
FR101 FR102 FR103 FR104 FR105 FR106 FR107  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.2  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
150  
250  
500  
nS  
pF  
°C  
°C  
15  
Tj  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
*Glass passivated forms are available upon request  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
FR101 – FR107  
1 of 3  
© 2002 Won-Top Electronics  

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