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FR102G-TB-LF PDF预览

FR102G-TB-LF

更新时间: 2024-02-01 02:49:56
品牌 Logo 应用领域
WTE 整流二极管快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 55K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

FR102G-TB-LF 技术参数

生命周期:Active零件包装代码:A-405
Reach Compliance Code:unknown风险等级:5.74
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:100 V最大反向恢复时间:0.15 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1
类别:DiodesVRRM (V) max:100
IF (A) max:1VF (V) max:1.3
Condition1_IF (A):1IFSM (A) max:30
IR (uA) max:5Condition2_VR (V):100
trr (ns) max:150AEC Qualified:NO
最高工作温度:125最低工作温度:-55
是否无铅:符合Reach:YES
符合RoHS:YESPackage Outlines:A-405

FR102G-TB-LF 数据手册

 浏览型号FR102G-TB-LF的Datasheet PDF文件第2页浏览型号FR102G-TB-LF的Datasheet PDF文件第3页浏览型号FR102G-TB-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
FR101 – FR107  
1.0A FAST RECOVERY DIODE  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: DO-41, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-41  
Dim  
A
Min  
25.4  
4.06  
0.71  
2.00  
Max  
!
!
!
!
!
B
5.21  
0.864  
2.72  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
FR101 FR102 FR103 FR104 FR105 FR106 FR107  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.2  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
150  
250  
500  
nS  
pF  
°C  
°C  
15  
Tj  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
FR101 – FR107  
1 of 4  
© 2006 Won-Top Electronics  

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