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FR102G-LF PDF预览

FR102G-LF

更新时间: 2024-02-03 08:14:10
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
4页 52K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

FR102G-LF 技术参数

生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.02
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:100 V
最大反向恢复时间:0.15 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

FR102G-LF 数据手册

 浏览型号FR102G-LF的Datasheet PDF文件第2页浏览型号FR102G-LF的Datasheet PDF文件第3页浏览型号FR102G-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
1.0A GLASS PASSIVATED FAST RECOVERY DIODE  
FR101G – FR107G  
Features  
Glass Passivated Die Construction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
Case: DO-41, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-41  
Min  
Dim  
A
Max  
25.4  
4.06  
0.71  
2.00  
B
5.21  
0.864  
2.72  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol FR101G FR102G FR103G FR104G FR105G FR106G FR107G Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
IO  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.3  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
150  
250  
500  
nS  
pF  
°C  
°C  
15  
Tj  
-65 to +175  
-65 to +175  
Storage Temperature Range  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
FR101G – FR107G  
1 of 4  
© 2006 Won-Top Electronics  

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