Datasheet > FQPF6N70

FQPF6N70

更新时间： 2024-11-27 22:20:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
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描述
700V N-Channel MOSFET

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数据手册
替代型号

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FQPF6N70 数据手册

December 2000

QFET

FQPF6N70

700V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

3.5A, 700V, R

= 1.5 Ω @ V = 10 V

DS(on) GS

Low gate charge ( typical 30 nC)

Low Crss ( typical 15 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the

avalanche and commutation modes. These devices are

well suited for high efficiency switch mode power supply.

! "

G D

TO-220F

FQPF Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQPF6N70

700

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

3.5

- Continuous (T = 100°C)

2.2

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

600

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

3.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.8

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.39

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.6

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

Rev. A2, December 2000

12 3 4 5 6 7 8

中文翻译

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FQPF6N70 替代型号

型号	品牌	替代类型	描述	数据表
FQP33N10	ONSEMI	功能相似	功率 MOSFET，N 沟道，QFET®，100 V，33 A，52 mΩ，TO-220
STD18N55M5	STMICROELECTRONICS	功能相似	N-channel 550 V, 0.18 Î©, 13 A, MDmeshâ¢ V P
STD6N95K5	STMICROELECTRONICS	功能相似	N-channel 950 V, 1 Î© typ., 9 A Zener-protect

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