Datasheet > FQPF1P50

FQPF1P50

更新时间： 2025-07-19 19:02:07

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安森美 - ONSEMI		/
页数	文件大小	规格书
8页	564K
描述
通孔P通道500V1.03A（Tc）28W（Tc）TO-220F-3

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FQPF1P50 数据手册

December 2000

QFET

FQPF1P50

500V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

-1.03A, -500V, R

= 10.5Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 11 nC)

Low Crss ( typical 6.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for electronic lamp ballasts based on the

complementary half bridge topology.

●

▶

▲

●

G D

TO-220F

FQPF Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQPF1P50

-500

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

-1.03

-0.65

-4.12

± 30

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

110

-1.03

2.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

-4.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.22

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

4.46

62.5

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

θJA

Rev. A2, December 2000

12 3 4 5 6 7 8

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