生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 580 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 7.4 A |
最大漏源导通电阻: | 1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 29.6 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP7N65C | FAIRCHILD |
获取价格 |
650V N-Channel MOSFET | |
FQP7N80 | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET | |
FQP7N80_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
FQP7N80C | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET | |
FQP7N80C | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,800 V,7 A,1.9 Ω,TO-220 | |
FQP7N80J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
FQP7P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQP7P06 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-60 V,-7 A,410 mΩ,TO-220 | |
FQP7P06_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal | |
FQP7P06J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal |