是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
雪崩能效等级(Eas): | 360 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (Abs) (ID): | 7 A |
最大漏极电流 (ID): | 7 A | 最大漏源导通电阻: | 0.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 98 W |
最大脉冲漏极电流 (IDM): | 28 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP7N40J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal | |
FQP7N60 | FAIRCHILD |
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600V N-Channel MOSFET | |
FQP7N60J69Z | FAIRCHILD |
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Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal | |
FQP7N65C | FAIRCHILD |
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650V N-Channel MOSFET | |
FQP7N80 | FAIRCHILD |
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800V N-Channel MOSFET | |
FQP7N80_NL | FAIRCHILD |
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Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
FQP7N80C | FAIRCHILD |
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800V N-Channel MOSFET | |
FQP7N80C | ONSEMI |
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功率 MOSFET,N 沟道,QFET®,800 V,7 A,1.9 Ω,TO-220 | |
FQP7N80J69Z | FAIRCHILD |
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Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
FQP7P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET |