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FQP34N20 PDF预览

FQP34N20

更新时间： 2024-11-27 11:13:23
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 768K
描述
功率 MOSFET，N 沟道，QFET®，200 V，31 A，75 mΩ，TO-220

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中文翻译

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FQP34N20 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.97
Samacsys Description：Trans MOSFET N-CH 200V 31A 3-Pin TO-220雪崩能效等级（Eas）：640 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：31 A最大漏极电流 (ID)：31 A
最大漏源导通电阻：0.075 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：180 W最大脉冲漏极电流 (IDM)：124 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FQP34N20 数据手册

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 		N 沟道 QFET® MOSFET 300V，3.2A，2.2Ω
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 		300V N-Channel MOSFET
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 		400V N-Channel MOSFET
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