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FQI4N80TU PDF预览

FQI4N80TU

更新时间： 2024-11-05 11:13:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
11页 971K
描述
800V N沟道QFET®

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中文翻译

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FQI4N80TU 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.57
雪崩能效等级（Eas）：460 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：800 V最大漏极电流 (Abs) (ID)：3.9 A
最大漏极电流 (ID)：3.9 A最大漏源导通电阻：3.6 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：130 W
最大脉冲漏极电流 (IDM)：15.6 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQI4N80TU 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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FQI4N80TU 替代型号

型号 品牌 替代类型 描述 数据表
FQI4N80TU FAIRCHILD

功能相似

 N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 3LD, TO262, JEDEC VARIATION AA

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