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FQD2N100TM PDF预览

FQD2N100TM

更新时间: 2023-09-03 20:32:45
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
9页 430K
描述
功率 MOSFET,N 沟道,QFET®,1000 V,1.6 A,9 Ω,DPAK

FQD2N100TM 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:10 weeks风险等级:0.74
雪崩能效等级(Eas):160 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):1.6 A最大漏极电流 (ID):1.6 A
最大漏源导通电阻:9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):6.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQD2N100TM 数据手册

 浏览型号FQD2N100TM的Datasheet PDF文件第2页浏览型号FQD2N100TM的Datasheet PDF文件第3页浏览型号FQD2N100TM的Datasheet PDF文件第4页浏览型号FQD2N100TM的Datasheet PDF文件第5页浏览型号FQD2N100TM的Datasheet PDF文件第6页浏览型号FQD2N100TM的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
QFET)  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
1000 V  
9
@
1
0
V
1.6 A  
1000 V, 1.6 A, 9 W  
D
FQU2N100, FQD2N100  
This NChannel enhancement mode power MOSFET is produced  
using onsemi’s proprietary planar stripe and DMOS technology. This  
advanced MOSFET technology has been especially tailored to reduce  
onstate resistance, and to provide superior switching performance  
and high avalanche energy strength. These devices are suitable  
for switched mode power supplies, active power factor correction  
(PFC), and electronic lamp ballasts.  
G
S
Features  
1.6 A, 1000 V, R  
= 9 (Max.) @ V = 10 V, I = 0.8 A  
GS D  
Low Gate Charge (Typ. 12 nC)  
Low Crss (Typ. 5 pF)  
DS(on)  
100% Avalanche Tested  
These Devices are PbFree, Halid Free and are RoHS Compliant  
DPAK3 (IPAK)  
CASE 369AR  
DPAK3 (TO252 3 LD)  
CASE 369AS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
MARKING DIAGRAMS  
Rating  
DrainSource Voltage  
Drain Current Continuous (T = 25°C)  
Symbol  
Value  
Unit  
V
V
DSS  
1000  
$Y&Z&3&K  
$Y&Z&3&K  
FQD  
I
D
1.6  
1.0  
A
C
FQU  
Continuous (T = 100°C)  
C
2N100  
2N100  
Drain Current Pulsed (Note 1)  
I
6.4  
30  
A
V
DM  
GateSource Voltage  
V
GSS  
Single Pulsed Avalanche Energy (Note 2)  
Avalanche Current (Note 1)  
E
160  
1.6  
5.0  
5.5  
2.5  
mJ  
A
AS  
AR  
I
Repetitive Avalanche Energy (Note 1)  
Peak Diode Recovery dv/dt (Note 3)  
E
AR  
mJ  
V/ns  
W
dv/dt  
Power Dissipation (T = 25°C) *  
P
FQU2N100,  
FQD2N100 = Device Code  
A
D
Power Dissipation (T = 25°C)  
50  
W
C
$Y  
&Z  
&3  
&K  
= onsemi Logo  
= Assembly Location  
= 3Digit Date Code  
= 2Digits Lot Run Traceability Code  
Derate above 25°C  
0.4  
W/°C  
Operating and Storage Temperature  
Range  
T , T  
55 to  
+150  
°C  
J
STG  
Maximum Lead Temperature for  
Soldering Purposes, 1/8”  
(from case for 5 seconds)  
T
L
300  
°C  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
FQU2N100TU  
DPAK3 (IPAK) 70 Units / Tube  
(PbFree)  
FQD2N100TM  
DPAK3  
2500 /  
(PbFree)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2022 Rev. 4  
FQU2N100/D  

FQD2N100TM 替代型号

型号 品牌 替代类型 描述 数据表
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