FQD20N06LTF

更新时间： 2024-02-09 23:43:52

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
9页	662K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQD20N06LTF 数据手册

May 2001

QFET

FQD20N06 / FQU20N06

60V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, DC/

DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

16.8A, 60V, R

= 0.063Ω @ V = 10V

DS(on) GS

Low gate charge ( typical 11.5 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

150 C maximum junction temperature rating

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD20N06 / FQU20N06

Units

Drain-Source Voltage

16.8

10.6

67.2

± 25

155

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

16.8

3.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

7.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.30

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.28

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1. May 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQD20N06LTF相关器件

型号	品牌	获取价格	描述	数据表
FQD20N06LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, M
FQD20N06TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16.8A I(D), 60V, 0.063ohm, 1-Element, N-Channel, Silicon, M
FQD20N06TM	FAIRCHILD	获取价格	N-Channel QFET MOSFET
FQD20N06TM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，60 V，16.8 A，63 mΩ，DPAK
FQD24N08	FAIRCHILD	获取价格	80V N-Channel MOSFET
FQD24N08TF	FAIRCHILD	获取价格	80V N-Channel MOSFET
FQD24N08TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Me
FQD26N03L	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| TO-252AA
FQD26N03LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
FQD2N100	FAIRCHILD	获取价格	1000V N-Channel MOSFET