Datasheet > FQB25N33TM

FQB25N33TM

更新时间： 2024-11-02 12:23:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	1215K
描述
330V N-Channel MOSFET

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数据手册
替代型号

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FQB25N33TM 数据手册

April 2010

FQB25N33TM_F085

330V N-Channel MOSFET

Features

General Description

•

25A, 330V, R_DS(on)= 0.23Ω @V_GS= 10V

Low gate charge (typical 58nC)

Low Crss (typical 40pF)

Fast switching

These N-Channel enhancement mode power field effect

transistors are produced using Farichild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimized on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficient switched mode power supplies,

active power factor correction, electronic lamp ballast

based on half bridge topology.

100% avalanche tested

Improved dv/dt capability

Qualified to AEC Q101

RoHS Compliant

Absolute Maximum Ratings

Symbol

Parameter

Ratings

330

Units

V_DSS

Drain-Source Voltage

Drain Current

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

I_D

16.0

100

I_DM

Drain Current

(Note 1)

V_GSS

E_AS

I_AR

Gate -Source Voltage

±30

Single Pulse Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

370

E_AR

dv/dt

Repetitive Avalance Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25^oC) *

Power Dissipation (T_C= 25^oC)

V/ns

4.5

3.1

P_D

250

- Derate above 25^oC

2.0

W/^oC

^oC

T_J, T_STGOperating and Storage Temperature

-55 to +150

Maximum lead temperature for soldering purposes,

1/8 from case for 5 seconds

T_L

300

^oC

Thermal Characteristics

Symbol

Parameter

Ratings

0.5

Units

^oC/W

R_θJC

Thermal Resistance, Junction to Case

R_θJA

Thermal Resistance, Junction to Ambient *

Thermal Resistance, Junction to Ambient

R_θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FQB25N33TM_F085 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

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FQB25N33TM 替代型号

型号	品牌	替代类型	描述	数据表
FDB28N30TM	FAIRCHILD	类似代替	N-Channel MOSFET

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