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FQB24N08 PDF预览

FQB24N08

更新时间: 2024-11-01 22:25:35
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飞兆/仙童 - FAIRCHILD /
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9页 722K
描述
80V N-Channel MOSFET

FQB24N08 数据手册

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August 2000  
TM  
QFET  
FQB24N08 / FQI24N08  
80V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as automotive, high  
efficiency switching for DC/DC converters, and DC motor  
control.  
24A, 80V, RDS(on) = 0.06@VGS = 10 V  
Low gate charge ( typical 19 nC)  
Low Crss ( typical 50 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
D
"
! "  
"
!
G
"
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQB24N08 / FQI24N08  
Units  
V
Drain-Source Voltage  
80  
24  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
A
17  
A
IDM  
(Note 1)  
Drain Current  
96  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
± 25  
230  
24  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C) *  
7.5  
mJ  
V/ns  
W
6.5  
3.75  
75  
Power Dissipation (TC = 25°C)  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
0.5  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +175  
Maximum lead temperature for soldering purposes,  
300  
°C  
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.0  
Units  
°C/W  
°C/W  
°C/W  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
--  
40  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A, August 2000  

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