是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | D2PAK |
包装说明: | D2PAK-3 | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.18 |
雪崩能效等级(Eas): | 710 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 22 A | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.125 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 88 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB22P10TM_F085 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET | |
FQB22P10TM-F085 | ONSEMI |
获取价格 |
100V,P 沟道,QFET®,-22A,125mΩ | |
FQB24N08 | FAIRCHILD |
获取价格 |
80V N-Channel MOSFET | |
FQB25N33 | FAIRCHILD |
获取价格 |
330V N-Channel MOSFET | |
FQB25N33TM | FAIRCHILD |
获取价格 |
330V N-Channel MOSFET | |
FQB25N33TM-F085 | ONSEMI |
获取价格 |
N 沟道,QFET® MOSFET,330V,25A,230mΩ | |
FQB26N03L | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 26A I(D) | TO-263AB | |
FQB26N03LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
FQB27N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQB27N25TM | ROCHESTER |
获取价格 |
25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 |