5秒后页面跳转
FQB22P10TM PDF预览

FQB22P10TM

更新时间: 2024-11-02 19:49:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
8页 993K
描述
Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

FQB22P10TM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:D2PAK-3针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
雪崩能效等级(Eas):710 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.125 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):88 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQB22P10TM 数据手册

 浏览型号FQB22P10TM的Datasheet PDF文件第2页浏览型号FQB22P10TM的Datasheet PDF文件第3页浏览型号FQB22P10TM的Datasheet PDF文件第4页浏览型号FQB22P10TM的Datasheet PDF文件第5页浏览型号FQB22P10TM的Datasheet PDF文件第6页浏览型号FQB22P10TM的Datasheet PDF文件第7页 
October 2013  
FQB22P10  
P-Channel QFET® MOSFET  
-100 V, -22 A, 125 mΩ  
Features  
Description  
This P-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor’s proprietary planar  
stripe and DMOS technology. This advanced MOSFET  
technology has been especially tailored to reduce on-state  
resistance, and to provide superior switching performance  
and high avalanche energy strength. These devices are  
suitable for switched mode power supplies, audio amplifier,  
DC motor control, and variable switching power applications.  
-22 A, -100 V, RDS(on) = 125 m(Max) @VGS = -10 V,  
ID = -11 A  
Low Gate Charge (Typ. 40 nC)  
Low Crss (Typ. 160 pF)  
100% Avalanche Tested  
175°C Maximum Junction Temperature Rating  
S
D
G
G
D2-PAK  
S
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB22P10TM  
-100  
Unit  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
-22  
A
D
C
- Continuous (T = 100°C)  
-15.6  
-88  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
±30  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
710  
mJ  
A
-22  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12.5  
mJ  
V/ns  
W
AR  
dv/dt  
-6.0  
Power Dissipation (T = 25°C) *  
3.75  
P
A
D
Power Dissipation (T = 25°C)  
125  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.83  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
FQB22P10TM  
Unit  
RJC  
Thermal Resistance, Junction to Case, Max.  
1.2  
62.5  
40  
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.  
oC/W  
RJA  
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.  
©2000 Fairchild Semiconductor Corporation  
FQB22P10 Rev. C3  
1
www.fairchildsemi.com  

FQB22P10TM 替代型号

型号 品牌 替代类型 描述 数据表
FQB22P10 FAIRCHILD

功能相似

100V P-Channel MOSFET

与FQB22P10TM相关器件

型号 品牌 获取价格 描述 数据表
FQB22P10TM_F085 FAIRCHILD

获取价格

100V P-Channel MOSFET
FQB22P10TM-F085 ONSEMI

获取价格

100V,P 沟道,QFET®,-22A,125mΩ
FQB24N08 FAIRCHILD

获取价格

80V N-Channel MOSFET
FQB25N33 FAIRCHILD

获取价格

330V N-Channel MOSFET
FQB25N33TM FAIRCHILD

获取价格

330V N-Channel MOSFET
FQB25N33TM-F085 ONSEMI

获取价格

N 沟道,QFET® MOSFET,330V,25A,230mΩ
FQB26N03L ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 26A I(D) | TO-263AB
FQB26N03LTM FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
FQB27N25 FAIRCHILD

获取价格

250V N-Channel MOSFET
FQB27N25TM ROCHESTER

获取价格

25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3