Datasheet > FQB22P10_13

FQB22P10_13

更新时间： 2024-09-16 12:33:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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描述
P-Channel QFET MOSFET

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FQB22P10_13 数据手册

March 2013

FQB22P10 / FQI22P10

P-Channel QFET MOSFET

-100 V, -22 A, 125 mΩ

Description

Features

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

audio amplifier, DC motor control, and variable switching

power applications.

•

-22 A, -100 V, R_DS(on)= 125 mΩ (Max) @V_GS= -10 V,

I_D= -11 A

•

Low Gate Charge (Typ. 40 nC)

Low Crss (Typ. 160 pF)

100% Avalanche Tested

175°C Maximum Junction Temperature Rating

D²-PAK

FQB Series

I²-PAK

FQI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB22P10 / FQI22P10

Unit

Drain-Source Voltage

-100

-22

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-15.6

-88

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

±30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

710

-22

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

12.5

V/ns

dv/dt

-6.0

Power Dissipation (T = 25°C) *

3.75

Power Dissipation (T = 25°C)

125

- Derate above 25°C

Operating and Storage Temperature Range

0.83

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.2

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

°C/W

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FQB22P10 / FQI22P10 Rev. C2

www.fairchildsemi.com

12 3 4 5 6 7...9

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