FQB20N06LTM

更新时间： 2024-11-06 13:07:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	672K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQB20N06LTM 数据手册

May 2001

QFET

FQB20N06 / FQI20N06

60V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, DC/

DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

20A, 60V, R

= 0.06Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 11.5 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB20N06 / FQI20N06

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

14.1

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 25

155

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.3

V/ns

dv/dt

7.0

Power Dissipation (T = 25°C) *

3.75

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.35

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.85

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1. May 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQB20N06LTM相关器件

型号	品牌	获取价格	描述	数据表
FQB20N06TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Meta
FQB22N30	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 300V V(BR)DSS \| 21A I(D) \| TO-263AB
FQB22P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB22P10_13	FAIRCHILD	获取价格	P-Channel QFET MOSFET
FQB22P10TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Me
FQB22P10TM	ONSEMI	获取价格	P 沟道 QFET® MOSFET -100V，-22A，125mΩ
FQB22P10TM_F085	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB22P10TM-F085	ONSEMI	获取价格	100V，P 沟道，QFET®，-22A，125mΩ
FQB24N08	FAIRCHILD	获取价格	80V N-Channel MOSFET
FQB25N33	FAIRCHILD	获取价格	330V N-Channel MOSFET