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FQB19N20CTM PDF预览

FQB19N20CTM

更新时间： 2024-11-07 11:14:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 1051K
描述
功率 MOSFET，N 沟道，QFET®，200 V，19 A，170 mΩ，D2PAK

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中文翻译

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FQB19N20CTM 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：8 weeks风险等级：0.9
Is Samacsys：N雪崩能效等级（Eas）：433 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：19 A
最大漏极电流 (ID)：19 A最大漏源导通电阻：0.17 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：139 W
最大脉冲漏极电流 (IDM)：76 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQB19N20CTM 数据手册

 浏览型号FQB19N20CTM的Datasheet PDF文件第2页浏览型号FQB19N20CTM的Datasheet PDF文件第3页浏览型号FQB19N20CTM的Datasheet PDF文件第4页浏览型号FQB19N20CTM的Datasheet PDF文件第5页浏览型号FQB19N20CTM的Datasheet PDF文件第6页浏览型号FQB19N20CTM的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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中文翻译

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与FQB19N20CTM相关器件

型号 品牌 获取价格 描述 数据表
FQB19N20L FAIRCHILD

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 		200V LOGIC N_Channel MOSFET
FQB19N20LTM FAIRCHILD

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 		Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
FQB19N20LTM ONSEMI

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 		N 沟道 QFET® MOSFET 200V, 21A, 140mΩ
FQB19N20LTM_NL FAIRCHILD

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 		暂无描述
FQB19N20TM FAIRCHILD

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 		Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, M
FQB19N20TM ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，200 V，19.4 A，150 mΩ，D2PA
FQB1N60 FAIRCHILD

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 		600V N-Channel MOSFET
FQB1N60TM FAIRCHILD

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 		Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Me
FQB1P50 FAIRCHILD

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 		500V P-Channel MOSFET
FQB1P50TM FAIRCHILD

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 		P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ohm

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