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FQB15P12TM PDF预览

FQB15P12TM

更新时间: 2024-11-01 19:31:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 649K
描述
Power Field-Effect Transistor, 15A I(D), 120V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

FQB15P12TM 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.35雪崩能效等级(Eas):1157 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:120 V最大漏极电流 (ID):15 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQB15P12TM 数据手册

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®
QFET  
FQB15P12 / FQI15P12  
120V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
-15A, -120V, R  
= 0.2@V = -10 V  
DS(on) GS  
Low gate charge ( typical 29 nC)  
Low Crss ( typical 110 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
D
G!  
I2-PAK  
FQI Series  
D2-PAK  
FQB Series  
G
S
G D S  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB15P12 / FQI15P12  
Units  
V
V
I
Drain-Source Voltage  
-120  
-15  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-10.6  
-60  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
1157  
-15  
mJ  
A
AS  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
10  
mJ  
V/ns  
W
AR  
dv/dt  
-5.0  
Power Dissipation (T = 25°C) *  
3.75  
100  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.67  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.5  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
40  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  

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