是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | D2PAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.35 | 雪崩能效等级(Eas): | 1157 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 120 V | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 60 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB16N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQB16N15TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 16.4A I(D), 150V, 0.16ohm, 1-Element, N-Channel, Silicon, M | |
FQB16N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQB16N25C | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQB16N25CTM | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQB16N25TM | FAIRCHILD |
获取价格 |
暂无描述 | |
FQB17N08 | FAIRCHILD |
获取价格 |
80V N-Channel MOSFET | |
FQB17N08L | FAIRCHILD |
获取价格 |
80V LOGIC N-Channel MOSFET | |
FQB17N08LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 16.5A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M | |
FQB17N08TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 16.5A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M |