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FPM2750QFN PDF预览

FPM2750QFN

更新时间： 2024-02-21 16:43:35
品牌 Logo 应用领域
FILTRONIC 放大器局域网
页数 文件大小 规格书
8页 418K
描述
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE

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FPM2750QFN 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
ECCN代码：5A991.GHTS代码：8541.21.00.95
风险等级：5.84最高工作温度：175 °C
极性/信道类型：N-CHANNEL功耗环境最大值：1 W
子类别：FET RF Small Signal

FPM2750QFN 数据手册

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FPM2750QFN  
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE  
Datasheet v2.5  
PACKAGE:  
FEATURES:  
•
•
•
•
•
•
•
Balanced low noise amplifier module  
Excellent Noise figure: 0.4dB at 1850MHz  
Low drive current: 40mA typical (3.0V)  
Combined IP3: 36dBm (100mA)  
Combined P1dB: 23dBm (100mA)  
Small footprint: 4mm x 4mm x 0.9mm QFN  
RoHS compliant: (Directive 2002/95/EC)  
GENERAL DESCRIPTION:  
TYPICAL APPLICATIONS:  
The FPM2750QFN is a packaged pair of  
•
Wireless infrastructure: Tower mounted  
Amplifiers and front end LNAs for  
EGSM/PCS/WCDMA/UMTS base stations  
High intercept-point LNAs  
pseudomorphic  
High  
Electron  
Mobility  
Transistors (pHEMT) specifically optimised for  
balanced configuration systems. The Filtronic  
0.25µm process ensures class-leading noise  
•
performance.  
The use of a small footprint  
plastic package allows for a cost effective total  
system implementation.  
ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated):  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Noise Figure  
NF  
VDS = 3.0 V; IDS = 40mA  
VDS = 4.0 V; IDS = 100mA  
0.4  
0.6  
dB  
Output IP3  
IP3  
VDS = 3.0 V; IDS = 40mA  
VDS = 4.0 V; IDS = 100mA  
32  
36  
dBm  
dB  
in balanced mode  
33  
SSG in balanced mode  
P1dB in balanced mode  
Small Signal Gain  
SSG  
P1dB  
SSG  
P1dB  
VDS = 3.0 V; IDS = 40mA  
VDS = 4.0 V; IDS = 100mA  
18.5  
20  
17.5  
21.5  
VDS = 3.0 V; IDS = 40mA  
VDS = 4.0 V; IDS = 100mA  
21  
dBm  
dB  
23.5  
VDS = 3.0 V; IDS = 40mA  
VDS = 4.0 V; IDS = 100mA  
19.0  
19.5  
Power at 1dB Gain Compression  
VDS = 3.0 V; IDS = 40mA  
VDS = 4.0 V; IDS = 100mA  
17.5  
17.5  
dBm  
Saturated Drain-Source Current  
Maximum Drain-Source Current  
Transconductance  
IDSS  
IMAX  
GM  
VDS = 1.3 V; VGS = 0 V  
VDS = 1.3 V; VGS ≅ +1 V  
VDS = 1.3 V; VGS = 0 V  
VGS = -5 V  
185  
230  
375  
200  
5
280  
mA  
mA  
mS  
μA  
V
Gate-Source Leakage Current  
Pinch-Off Voltage  
IGSO  
|VP|  
VDS = 1.3 V; IDS = 0.75 mA  
0.7  
1.0  
1.3  
Gate-Source Breakdown Voltage  
Gate-Drain Breakdown Voltage  
Thermal Resistance  
|VBDGS|  
|VBDGD|  
ΘJC  
IGS = 0.75 mA  
IGD = 0.75 mA  
16  
16  
V
V
1W dissipation, case temperature 22°C  
124  
°C/W  
Note: TAMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).  
1
Specifications subject to change without notice  
Filtronic Compound Semiconductors Ltd  
Tel: +44 (0) 1325 301111  
Fax: +44 (0) 1325 306177  
Email: sales@filcs.com  
Website: www.filtronic.com  
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